Vishay Semiconductor Diodes Division - ESH3B-E3/9AT

KEY Part #: K6456977

ESH3B-E3/9AT Pagpepresyo (USD) [286357pcs Stock]

  • 1 pcs$0.12917
  • 3,500 pcs$0.11706

Bilang ng Bahagi:
ESH3B-E3/9AT
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 100V 3.0A 25ns Glass Passivated
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Diode - Rectifiers - Arrays, Diode - Zener - Single, Transistor - Programmable Unijunction and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division ESH3B-E3/9AT electronic components. ESH3B-E3/9AT can be shipped within 24 hours after order. If you have any demands for ESH3B-E3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3B-E3/9AT Mga katangian ng produkto

Bilang ng Bahagi : ESH3B-E3/9AT
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 3A DO214AB
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 900mV @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 40ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 175°C

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