Vishay Semiconductor Diodes Division - GBU8J-5410M3/51

KEY Part #: K6541045

[12505pcs Stock]


    Bilang ng Bahagi:
    GBU8J-5410M3/51
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    BRIDGE RECT 1PHASE 600V 3.9A GBU.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module and Diode - Zener - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division GBU8J-5410M3/51 electronic components. GBU8J-5410M3/51 can be shipped within 24 hours after order. If you have any demands for GBU8J-5410M3/51, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GBU8J-5410M3/51 Mga katangian ng produkto

    Bilang ng Bahagi : GBU8J-5410M3/51
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : BRIDGE RECT 1PHASE 600V 3.9A GBU
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Single Phase
    Teknolohiya : Standard
    Boltahe - Peak Reverse (Max) : 600V
    Kasalukuyang - Average na Rectified (Io) : 3.9A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 8A
    Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
    Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
    Uri ng Pag-mount : Through Hole
    Pakete / Kaso : 4-SIP, GBU
    Package ng Tagabigay ng Device : GBU

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