Vishay Semiconductor Diodes Division - BYG10J/TR

KEY Part #: K6425843

BYG10J/TR Pagpepresyo (USD) [822672pcs Stock]

  • 1 pcs$0.04496
  • 7,200 pcs$0.04158

Bilang ng Bahagi:
BYG10J/TR
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE AVALANCHE 600V 1.5A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF and Mga Transistor - JFET ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BYG10J/TR electronic components. BYG10J/TR can be shipped within 24 hours after order. If you have any demands for BYG10J/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10J/TR Mga katangian ng produkto

Bilang ng Bahagi : BYG10J/TR
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE AVALANCHE 600V 1.5A
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Avalanche
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1.5A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 1.5A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 4µs
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

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