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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. NGTD8R65F2WP

ON Semiconductor - NGTD8R65F2WP

KEY Part #: K6442108

NGTD8R65F2WP Pagpepresyo (USD) [173620pcs Stock]

  • 1 pcs$0.21304
  • 1,112 pcs$0.16819
Bilang ng Bahagi:
NGTD8R65F2WP
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 650V DIE.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Mga Transistor - JFET and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor NGTD8R65F2WP electronic components. NGTD8R65F2WP can be shipped within 24 hours after order. If you have any demands for NGTD8R65F2WP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTD8R65F2WP Mga katangian ng produkto

Bilang ng Bahagi : NGTD8R65F2WP
Tagagawa : ON Semiconductor
Paglalarawan : DIODE GEN PURP 650V DIE
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 650V
Kasalukuyang - Average na Rectified (Io) : -
Boltahe - Ipasa (Vf) (Max) @ Kung : 2.8V @ 30A
Bilis : -
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 650V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : Die
Package ng Tagabigay ng Device : Die
Operating temperatura - Junction : 175°C (Max)

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