Bilang ng Bahagi :
EGP30J
Tagagawa :
ON Semiconductor
Paglalarawan :
DIODE GEN PURP 600V 3A DO201AD
Katayuan ng Bahagi :
Active
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.7V @ 3A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
75ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 600V
Capacitance @ Vr, F :
75pF @ 4V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
DO-201AD, Axial
Package ng Tagabigay ng Device :
DO-201AD
Operating temperatura - Junction :
-65°C ~ 150°C