ON Semiconductor - EGP30J

KEY Part #: K6447790

EGP30J Pagpepresyo (USD) [423824pcs Stock]

  • 1 pcs$0.10593
  • 1,250 pcs$0.10540
  • 2,500 pcs$0.09610
  • 6,250 pcs$0.08990
  • 12,500 pcs$0.08370

Bilang ng Bahagi:
EGP30J
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 3A DO201AD. Rectifiers 3.0a Rectifier UF Recovery
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor EGP30J electronic components. EGP30J can be shipped within 24 hours after order. If you have any demands for EGP30J, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP30J Mga katangian ng produkto

Bilang ng Bahagi : EGP30J
Tagagawa : ON Semiconductor
Paglalarawan : DIODE GEN PURP 600V 3A DO201AD
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 75pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-201AD, Axial
Package ng Tagabigay ng Device : DO-201AD
Operating temperatura - Junction : -65°C ~ 150°C

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