Vishay Semiconductor Diodes Division - FEP6BTHE3/45

KEY Part #: K6477119

FEP6BTHE3/45 Pagpepresyo (USD) [5532pcs Stock]

  • 2,000 pcs$0.19767

Bilang ng Bahagi:
FEP6BTHE3/45
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE ARRAY GP 100V 6A TO220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division FEP6BTHE3/45 electronic components. FEP6BTHE3/45 can be shipped within 24 hours after order. If you have any demands for FEP6BTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FEP6BTHE3/45 Mga katangian ng produkto

Bilang ng Bahagi : FEP6BTHE3/45
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE ARRAY GP 100V 6A TO220AB
Serye : -
Katayuan ng Bahagi : Obsolete
Pag-configure ng Diode : 1 Pair Common Cathode
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 6A
Boltahe - Ipasa (Vf) (Max) @ Kung : 975mV @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V
Operating temperatura - Junction : -55°C ~ 150°C
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-3
Package ng Tagabigay ng Device : TO-220AB

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