EGF1AHE3_A/H Pagpepresyo (USD) [460696pcs Stock]
- 1 pcs$0.08029
- Bilang ng Bahagi:
- EGF1AHE3_A/H
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 50V 1A DO214BA. Rectifiers 1A,50V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Arrays, Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division EGF1AHE3_A/H electronic components. EGF1AHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGF1AHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1AHE3_A/H Mga katangian ng produkto
Bilang ng Bahagi :
EGF1AHE3_A/H
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 50V 1A DO214BA
Serye :
Automotive, AEC-Q101, Superectifier®
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
50V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 50V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214BA
Package ng Tagabigay ng Device :
DO-214BA (GF1)
Operating temperatura - Junction :
-65°C ~ 175°C
Pinakabagong Balita
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