BSM10GD120DN2E3224BOSA1 Pagpepresyo (USD) [1642pcs Stock]
- 1 pcs$26.36640
- Bilang ng Bahagi:
- BSM10GD120DN2E3224BOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT 2 LOW POWER ECONO2-1.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSM10GD120DN2E3224BOSA1 electronic components. BSM10GD120DN2E3224BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM10GD120DN2E3224BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM10GD120DN2E3224BOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSM10GD120DN2E3224BOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT 2 LOW POWER ECONO2-1
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
-
Pag-configure :
Full Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
15A
Kapangyarihan - Max :
80W
Vce (on) (Max) @ Vge, Ic :
3.2V @ 15V, 10A
Kasalukuyang - Collector Cutoff (Max) :
400µA
Input Capacitance (Cies) @ Vce :
530pF @ 25V
Input :
Standard
NTC Thermistor :
No
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
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