2SA1312GRTE85LF Pagpepresyo (USD) [1484466pcs Stock]
- 1 pcs$0.02492
- Bilang ng Bahagi:
- 2SA1312GRTE85LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS PNP 120V 0.1A S-MINI.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Diode - Zener - Single and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SA1312GRTE85LF electronic components. 2SA1312GRTE85LF can be shipped within 24 hours after order. If you have any demands for 2SA1312GRTE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SA1312GRTE85LF Mga katangian ng produkto
Bilang ng Bahagi :
2SA1312GRTE85LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PNP 120V 0.1A S-MINI
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
PNP
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
120V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Kapangyarihan - Max :
150mW
Dalas - Paglilipat :
100MHz
Temperatura ng pagpapatakbo :
125°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
S-Mini
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