Vishay Semiconductor Diodes Division - GF1JHE3/67A

KEY Part #: K6449047

GF1JHE3/67A Pagpepresyo (USD) [500114pcs Stock]

  • 1 pcs$0.07396
  • 6,000 pcs$0.06624

Bilang ng Bahagi:
GF1JHE3/67A
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A DO214BA. Rectifiers 600 Volt 1.0 Amp Glass Passivated
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Diode - RF, Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Transistor - Espesyal na Pakay and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division GF1JHE3/67A electronic components. GF1JHE3/67A can be shipped within 24 hours after order. If you have any demands for GF1JHE3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GF1JHE3/67A Mga katangian ng produkto

Bilang ng Bahagi : GF1JHE3/67A
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 1A DO214BA
Serye : SUPERECTIFIER®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 1A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214BA
Package ng Tagabigay ng Device : DO-214BA (GF1)
Operating temperatura - Junction : -65°C ~ 175°C

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