IPN60R3K4CEATMA1 Pagpepresyo (USD) [514616pcs Stock]
- 1 pcs$0.07187
- 3,000 pcs$0.06317
- Bilang ng Bahagi:
- IPN60R3K4CEATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET NCH 600V 2.6A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Diode - Zener - Single, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga SCR, Diode - Zener - Arrays and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPN60R3K4CEATMA1 electronic components. IPN60R3K4CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R3K4CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R3K4CEATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPN60R3K4CEATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET NCH 600V 2.6A SOT223
Serye :
CoolMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs :
4.6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
93pF @ 100V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
5W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223
Pakete / Kaso :
SOT-223-3
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