Bilang ng Bahagi :
RN1106MFV(TL3,T)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PREBIAS NPN 0.15W VESM
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
NPN - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Kapangyarihan - Max :
150mW
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
VESM