[2688pcs Stock]
- Bilang ng Bahagi:
- RN1106MFV(TL3,T)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS PREBIAS NPN 0.15W VESM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage RN1106MFV(TL3,T) electronic components. RN1106MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1106MFV(TL3,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1106MFV(TL3,T) Mga katangian ng produkto
Bilang ng Bahagi :
RN1106MFV(TL3,T)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PREBIAS NPN 0.15W VESM
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
NPN - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Dalas - Paglilipat :
-
Kapangyarihan - Max :
150mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-723
Package ng Tagabigay ng Device :
VESM
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