IMBD4448-HE3-18 Pagpepresyo (USD) [2381497pcs Stock]
- 1 pcs$0.01639
- 10,000 pcs$0.01631
- Bilang ng Bahagi:
- IMBD4448-HE3-18
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 75V 150MA SOT23. Diodes - General Purpose, Power, Switching 750V 150mA 4ns 500mA IFSM
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Thyristors - Mga SCR and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division IMBD4448-HE3-18 electronic components. IMBD4448-HE3-18 can be shipped within 24 hours after order. If you have any demands for IMBD4448-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IMBD4448-HE3-18 Mga katangian ng produkto
Bilang ng Bahagi :
IMBD4448-HE3-18
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 75V 150MA SOT23
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
75V
Kasalukuyang - Average na Rectified (Io) :
150mA
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 10mA
Bilis :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Kasalukuyang - Reverse Leakage @ Vr :
2.5µA @ 70V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
SOT-23
Operating temperatura - Junction :
150°C (Max)
Pinakabagong Balita
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