2SA1955FVATPL3Z Pagpepresyo (USD) [1268774pcs Stock]
- 1 pcs$0.02930
- 8,000 pcs$0.02915
- Bilang ng Bahagi:
- 2SA1955FVATPL3Z
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS PNP 12V 0.4A VESM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Diode - Zener - Single and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SA1955FVATPL3Z electronic components. 2SA1955FVATPL3Z can be shipped within 24 hours after order. If you have any demands for 2SA1955FVATPL3Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SA1955FVATPL3Z Mga katangian ng produkto
Bilang ng Bahagi :
2SA1955FVATPL3Z
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PNP 12V 0.4A VESM
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
PNP
Kasalukuyang - Kolektor (Ic) (Max) :
400mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
12V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 200mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA, 2V
Kapangyarihan - Max :
100mW
Dalas - Paglilipat :
130MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SC-101, SOT-883
Package ng Tagabigay ng Device :
CST3
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