IDP30E65D2XKSA1 Pagpepresyo (USD) [73006pcs Stock]
- 1 pcs$0.53559
- 500 pcs$0.42961
- Bilang ng Bahagi:
- IDP30E65D2XKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE GEN PURP 650V 60A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Single, Diode - Mga Rectifier ng Bridge and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IDP30E65D2XKSA1 electronic components. IDP30E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP30E65D2XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP30E65D2XKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
IDP30E65D2XKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE GEN PURP 650V 60A TO220-2
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
650V
Kasalukuyang - Average na Rectified (Io) :
60A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
2.2V @ 30A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
42ns
Kasalukuyang - Reverse Leakage @ Vr :
40µA @ 650V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-2
Package ng Tagabigay ng Device :
PG-TO220-2-1
Operating temperatura - Junction :
-40°C ~ 175°C
Pinakabagong Balita
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