Vishay Semiconductor Diodes Division - S1FLJ-GS18

KEY Part #: K6439430

S1FLJ-GS18 Pagpepresyo (USD) [2154871pcs Stock]

  • 1 pcs$0.01725
  • 50,000 pcs$0.01716

Bilang ng Bahagi:
S1FLJ-GS18
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A DO219AB. Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division S1FLJ-GS18 electronic components. S1FLJ-GS18 can be shipped within 24 hours after order. If you have any demands for S1FLJ-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1FLJ-GS18 Mga katangian ng produkto

Bilang ng Bahagi : S1FLJ-GS18
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 1A DO219AB
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 700mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 1A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.8µs
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 4pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : DO-219AB (SMF)
Operating temperatura - Junction : -55°C ~ 150°C

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