BSC0501NSIATMA1 Pagpepresyo (USD) [154630pcs Stock]
- 1 pcs$0.23920
- 5,000 pcs$0.21947
- Bilang ng Bahagi:
- BSC0501NSIATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 29A 8TDSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSC0501NSIATMA1 electronic components. BSC0501NSIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC0501NSIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC0501NSIATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSC0501NSIATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 29A 8TDSON
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
29A (Ta), 100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 15V
Tampok ng FET :
Schottky Diode (Body)
Power Dissipation (Max) :
2.5W (Ta), 50W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TDSON-8
Pakete / Kaso :
8-PowerTDFN
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