Bilang ng Bahagi :
1N3595US
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 4A B-MELF
Katayuan ng Bahagi :
Active
Boltahe - DC Reverse (Vr) (Max) :
-
Kasalukuyang - Average na Rectified (Io) :
4A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 200mA
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
3µs
Kasalukuyang - Reverse Leakage @ Vr :
1nA @ 125V
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, B
Package ng Tagabigay ng Device :
B, SQ-MELF
Operating temperatura - Junction :
-65°C ~ 150°C