SGB15N120ATMA1 Pagpepresyo (USD) [32036pcs Stock]
- 1 pcs$1.28646
- 1,000 pcs$0.99910
- Bilang ng Bahagi:
- SGB15N120ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT 1200V 30A 198W TO263-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC, Thyristors - Mga SCR, Mga module ng Power driver, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SGB15N120ATMA1 electronic components. SGB15N120ATMA1 can be shipped within 24 hours after order. If you have any demands for SGB15N120ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SGB15N120ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
SGB15N120ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT 1200V 30A 198W TO263-3
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
NPT
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
30A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
52A
Vce (on) (Max) @ Vge, Ic :
3.6V @ 15V, 15A
Kapangyarihan - Max :
198W
Paglipat ng Enerhiya :
1.9mJ
Uri ng input :
Standard
Gate Charge :
130nC
Td (on / off) @ 25 ° C :
18ns/580ns
Kondisyon ng Pagsubok :
800V, 15A, 33 Ohm, 15V
Reverse Recovery Time (trr) :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
PG-TO263-3
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