FGH25N120FTDS Pagpepresyo (USD) [11882pcs Stock]
- 1 pcs$3.46831
- Bilang ng Bahagi:
- FGH25N120FTDS
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 1200V 50A 313W TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FGH25N120FTDS electronic components. FGH25N120FTDS can be shipped within 24 hours after order. If you have any demands for FGH25N120FTDS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGH25N120FTDS Mga katangian ng produkto
Bilang ng Bahagi :
FGH25N120FTDS
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 1200V 50A 313W TO247
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
50A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
75A
Vce (on) (Max) @ Vge, Ic :
2V @ 15V, 25A
Kapangyarihan - Max :
313W
Paglipat ng Enerhiya :
1.42mJ (on), 1.16mJ (off)
Uri ng input :
Standard
Gate Charge :
169nC
Td (on / off) @ 25 ° C :
26ns/151ns
Kondisyon ng Pagsubok :
600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
535ns
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-247-3
Package ng Tagabigay ng Device :
TO-247
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