NSBC123JPDP6T5G Pagpepresyo (USD) [1565997pcs Stock]
- 1 pcs$0.02362
- 16,000 pcs$0.02100
- Bilang ng Bahagi:
- NSBC123JPDP6T5G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- TRANS 2NPN PREBIAS 0.339W SOT963.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Zener - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NSBC123JPDP6T5G electronic components. NSBC123JPDP6T5G can be shipped within 24 hours after order. If you have any demands for NSBC123JPDP6T5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSBC123JPDP6T5G Mga katangian ng produkto
Bilang ng Bahagi :
NSBC123JPDP6T5G
Tagagawa :
ON Semiconductor
Paglalarawan :
TRANS 2NPN PREBIAS 0.339W SOT963
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 NPN - Pre-Biased (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
2.2 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Dalas - Paglilipat :
-
Kapangyarihan - Max :
339mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-963
Package ng Tagabigay ng Device :
SOT-963
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