Vishay Semiconductor Diodes Division - FESB16DTHE3/81

KEY Part #: K6456056

FESB16DTHE3/81 Pagpepresyo (USD) [68452pcs Stock]

  • 1 pcs$0.57121
  • 800 pcs$0.53010

Bilang ng Bahagi:
FESB16DTHE3/81
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 16A TO263AB. Rectifiers 200 Volt 16 Amp 35ns Single
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistor - Mga FET, MOSFET - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division FESB16DTHE3/81 electronic components. FESB16DTHE3/81 can be shipped within 24 hours after order. If you have any demands for FESB16DTHE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16DTHE3/81 Mga katangian ng produkto

Bilang ng Bahagi : FESB16DTHE3/81
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 200V 16A TO263AB
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 16A
Boltahe - Ipasa (Vf) (Max) @ Kung : 975mV @ 16A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 175pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB
Operating temperatura - Junction : -65°C ~ 150°C

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