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  5. MURT10060

GeneSiC Semiconductor - MURT10060

KEY Part #: K6468669

MURT10060 Pagpepresyo (USD) [1067pcs Stock]

  • 1 pcs$40.55691
  • 50 pcs$27.12140
Bilang ng Bahagi:
MURT10060
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
DIODE ARRAY GP 600V 100A 3TOWER. Rectifiers SI S-FST RECOV 3TWR 50-600V100A600P/424R
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor MURT10060 electronic components. MURT10060 can be shipped within 24 hours after order. If you have any demands for MURT10060, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURT10060 Mga katangian ng produkto

Bilang ng Bahagi : MURT10060
Tagagawa : GeneSiC Semiconductor
Paglalarawan : DIODE ARRAY GP 600V 100A 3TOWER
Serye : -
Katayuan ng Bahagi : Active
Pag-configure ng Diode : -
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 100A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 100A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Kasalukuyang - Reverse Leakage @ Vr : 25µA @ 50V
Operating temperatura - Junction : -40°C ~ 175°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Three Tower
Package ng Tagabigay ng Device : Three Tower
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