IRFR4105ZPBF Pagpepresyo (USD) [13783pcs Stock]
- 3,000 pcs$0.18802
- Bilang ng Bahagi:
- IRFR4105ZPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 30A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Mga module ng Power driver, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFR4105ZPBF electronic components. IRFR4105ZPBF can be shipped within 24 hours after order. If you have any demands for IRFR4105ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR4105ZPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFR4105ZPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 55V 30A DPAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
24.5 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
48W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D-Pak
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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