Toshiba Semiconductor and Storage - 1SS427,L3M

KEY Part #: K6455928

1SS427,L3M Pagpepresyo (USD) [2750629pcs Stock]

  • 1 pcs$0.01419
  • 10,000 pcs$0.01412
  • 30,000 pcs$0.01329
  • 50,000 pcs$0.01246
  • 100,000 pcs$0.01107

Bilang ng Bahagi:
1SS427,L3M
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
DIODE GEN PURP 80V 100MA SOD923. Diodes - General Purpose, Power, Switching 300mA SW DIODE
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage 1SS427,L3M electronic components. 1SS427,L3M can be shipped within 24 hours after order. If you have any demands for 1SS427,L3M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS427,L3M Mga katangian ng produkto

Bilang ng Bahagi : 1SS427,L3M
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : DIODE GEN PURP 80V 100MA SOD923
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 80V
Kasalukuyang - Average na Rectified (Io) : 100mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 100mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 1.6ns
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 80V
Capacitance @ Vr, F : 0.3pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOD-923
Package ng Tagabigay ng Device : SOD-923
Operating temperatura - Junction : -55°C ~ 150°C

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