[3589pcs Stock]
- Bilang ng Bahagi:
- CLH01(TE16R,Q)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- DIODE GEN PURP 200V 3A L-FLAT.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage CLH01(TE16R,Q) electronic components. CLH01(TE16R,Q) can be shipped within 24 hours after order. If you have any demands for CLH01(TE16R,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CLH01(TE16R,Q) Mga katangian ng produkto
Bilang ng Bahagi :
CLH01(TE16R,Q)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
DIODE GEN PURP 200V 3A L-FLAT
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
200V
Kasalukuyang - Average na Rectified (Io) :
3A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
0.98V @ 3A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 200V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
L-FLAT™
Package ng Tagabigay ng Device :
L-FLAT™ (4x5.5)
Operating temperatura - Junction :
-40°C ~ 150°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
-
VS-8EWF04S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 8A TO252AA. Diodes - General Purpose, Power, Switching New Input Diodes - D-PAK-e3
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