DDB6U215N16LHOSA1 Pagpepresyo (USD) [641pcs Stock]
- 1 pcs$72.42381
- Bilang ng Bahagi:
- DDB6U215N16LHOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE MODULE GP 1600V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Mga Transistor - JFET, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies DDB6U215N16LHOSA1 electronic components. DDB6U215N16LHOSA1 can be shipped within 24 hours after order. If you have any demands for DDB6U215N16LHOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DDB6U215N16LHOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
DDB6U215N16LHOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE MODULE GP 1600V
Serye :
-
Katayuan ng Bahagi :
Active
Pag-configure ng Diode :
3 Independent
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1600V
Kasalukuyang - Average Rectified (Io) (bawat Diode) :
-
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.61V @ 300A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
10mA @ 1600V
Operating temperatura - Junction :
-40°C ~ 150°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
Pinakabagong Balita
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