Vishay Semiconductor Diodes Division - ES2B-E3/5BT

KEY Part #: K6449795

ES2B-E3/5BT Pagpepresyo (USD) [602236pcs Stock]

  • 1 pcs$0.06142
  • 6,400 pcs$0.04834

Bilang ng Bahagi:
ES2B-E3/5BT
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2.0 Amp 100V 20ns
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Diode - RF, Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division ES2B-E3/5BT electronic components. ES2B-E3/5BT can be shipped within 24 hours after order. If you have any demands for ES2B-E3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2B-E3/5BT Mga katangian ng produkto

Bilang ng Bahagi : ES2B-E3/5BT
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 2A DO214AA
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 2A
Boltahe - Ipasa (Vf) (Max) @ Kung : 900mV @ 2A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 18pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AA, SMB
Package ng Tagabigay ng Device : DO-214AA (SMB)
Operating temperatura - Junction : -55°C ~ 150°C

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