FDMS3660S Pagpepresyo (USD) [179509pcs Stock]
- 1 pcs$0.20605
- 3,000 pcs$0.20099
- Bilang ng Bahagi:
- FDMS3660S
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 13A/30A 8-PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDMS3660S electronic components. FDMS3660S can be shipped within 24 hours after order. If you have any demands for FDMS3660S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS3660S Mga katangian ng produkto
Bilang ng Bahagi :
FDMS3660S
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET 2N-CH 30V 13A/30A 8-PQFN
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Asymmetrical
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
13A, 30A
Rds On (Max) @ Id, Vgs :
8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1765pF @ 15V
Kapangyarihan - Max :
1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
Power56
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