Infineon Technologies - IRFS3307ZTRLPBF

KEY Part #: K6402940

IRFS3307ZTRLPBF Pagpepresyo (USD) [56317pcs Stock]

  • 1 pcs$0.69429
  • 800 pcs$0.60080

Bilang ng Bahagi:
IRFS3307ZTRLPBF
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 75V 120A D2PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Diode - Zener - Arrays and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS3307ZTRLPBF Mga katangian ng produkto

Bilang ng Bahagi : IRFS3307ZTRLPBF
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 75V 120A D2PAK
Serye : HEXFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 75V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4750pF @ 50V
Tampok ng FET : -
Power Dissipation (Max) : 230W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D2PAK
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB