DDTD113EC-7-F Pagpepresyo (USD) [1557132pcs Stock]
- 1 pcs$0.02375
- 3,000 pcs$0.02201
- 6,000 pcs$0.01914
- 15,000 pcs$0.01627
- 30,000 pcs$0.01531
- 75,000 pcs$0.01436
- 150,000 pcs$0.01244
- Bilang ng Bahagi:
- DDTD113EC-7-F
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- TRANS PREBIAS NPN 200MW SOT23-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Mga module ng Power driver, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Mga Transistor - JFET and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DDTD113EC-7-F electronic components. DDTD113EC-7-F can be shipped within 24 hours after order. If you have any demands for DDTD113EC-7-F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DDTD113EC-7-F Mga katangian ng produkto
Bilang ng Bahagi :
DDTD113EC-7-F
Tagagawa :
Diodes Incorporated
Paglalarawan :
TRANS PREBIAS NPN 200MW SOT23-3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
NPN - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
500mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
1 kOhms
Resistor - Emitter Base (R2) :
1 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Dalas - Paglilipat :
200MHz
Kapangyarihan - Max :
200mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
SOT-23-3
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