HGTG10N120BND Pagpepresyo (USD) [23675pcs Stock]
- 1 pcs$1.63059
- 10 pcs$1.46268
- 100 pcs$1.19857
- 500 pcs$0.96799
- 1,000 pcs$0.81638
- Bilang ng Bahagi:
- HGTG10N120BND
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 1200V 35A 298W TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Zener - Arrays, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor HGTG10N120BND electronic components. HGTG10N120BND can be shipped within 24 hours after order. If you have any demands for HGTG10N120BND, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG10N120BND Mga katangian ng produkto
Bilang ng Bahagi :
HGTG10N120BND
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 1200V 35A 298W TO247
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
NPT
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
35A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Kapangyarihan - Max :
298W
Paglipat ng Enerhiya :
850µJ (on), 800µJ (off)
Uri ng input :
Standard
Gate Charge :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Kondisyon ng Pagsubok :
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
70ns
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-247-3
Package ng Tagabigay ng Device :
TO-247
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