BSB012NE2LXIXUMA1 Pagpepresyo (USD) [95125pcs Stock]
- 1 pcs$0.41105
- 5,000 pcs$0.30541
- Bilang ng Bahagi:
- BSB012NE2LXIXUMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 25V 170A WDSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSB012NE2LXIXUMA1 electronic components. BSB012NE2LXIXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB012NE2LXIXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB012NE2LXIXUMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSB012NE2LXIXUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 25V 170A WDSON
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
170A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5852pF @ 12V
Tampok ng FET :
-
Power Dissipation (Max) :
2.8W (Ta), 57W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
MG-WDSON-2, CanPAK M™
Pakete / Kaso :
3-WDSON
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