IRFH6200TRPBF Pagpepresyo (USD) [107371pcs Stock]
- 1 pcs$0.34448
- 4,000 pcs$0.30405
- Bilang ng Bahagi:
- IRFH6200TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 49A 8-PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays, Diode - Rectifiers - Single, Thyristors - Mga TRIAC and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH6200TRPBF electronic components. IRFH6200TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH6200TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH6200TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH6200TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 20V 49A 8-PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
49A (Ta), 100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
0.95 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
10890pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
3.6W (Ta), 156W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-PQFN (5x6)
Pakete / Kaso :
8-PowerVDFN
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