CMG06(TE12L,Q,M) Pagpepresyo (USD) [871993pcs Stock]
- 1 pcs$0.04242
- Bilang ng Bahagi:
- CMG06(TE12L,Q,M)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 1A M-FLAT. Rectifiers 600V Vrrm 1.0A IF 1.1V VFM 15A IFRM
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage CMG06(TE12L,Q,M) electronic components. CMG06(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for CMG06(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CMG06(TE12L,Q,M) Mga katangian ng produkto
Bilang ng Bahagi :
CMG06(TE12L,Q,M)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
DIODE GEN PURP 600V 1A M-FLAT
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.1V @ 1A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOD-128
Package ng Tagabigay ng Device :
M-FLAT (2.4x3.8)
Operating temperatura - Junction :
-40°C ~ 150°C
Pinakabagong Balita
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