Taiwan Semiconductor Corporation - 1N4003GR0

KEY Part #: K6458579

1N4003GR0 Pagpepresyo (USD) [2627005pcs Stock]

  • 1 pcs$0.01408

Bilang ng Bahagi:
1N4003GR0
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
1A200VSTD.GLASS PASSIVATED REC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation 1N4003GR0 electronic components. 1N4003GR0 can be shipped within 24 hours after order. If you have any demands for 1N4003GR0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4003GR0 Mga katangian ng produkto

Bilang ng Bahagi : 1N4003GR0
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : 1A200VSTD.GLASS PASSIVATED REC
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AL, DO-41, Axial
Package ng Tagabigay ng Device : DO-204AL (DO-41)
Operating temperatura - Junction : -55°C ~ 150°C

Maaari ka ring Makisalamuha sa
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode