Vishay Siliconix - SQJ962EP-T1-GE3

KEY Part #: K6523759

[4664pcs Stock]


    Bilang ng Bahagi:
    SQJ962EP-T1-GE3
    Tagagawa:
    Vishay Siliconix
    Detalyadong Paglalarawan:
    MOSFET 2N-CH 60V 8A 8SO.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single, Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF and Diode - RF ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Siliconix SQJ962EP-T1-GE3 electronic components. SQJ962EP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SQJ962EP-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SQJ962EP-T1-GE3 Mga katangian ng produkto

    Bilang ng Bahagi : SQJ962EP-T1-GE3
    Tagagawa : Vishay Siliconix
    Paglalarawan : MOSFET 2N-CH 60V 8A 8SO
    Serye : Automotive, AEC-Q101, TrenchFET®
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : 2 N-Channel (Dual)
    Tampok ng FET : Logic Level Gate
    Drain sa Source Voltage (Vdss) : 60V
    Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8A
    Rds On (Max) @ Id, Vgs : 60 mOhm @ 4.3A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 25V
    Kapangyarihan - Max : 25W
    Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : PowerPAK® SO-8 Dual
    Package ng Tagabigay ng Device : PowerPAK® SO-8 Dual

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