[12777pcs Stock]
- Bilang ng Bahagi:
- IRFBE20L
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 1.8A TO-262.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - FET, MOSFET - RF and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRFBE20L electronic components. IRFBE20L can be shipped within 24 hours after order. If you have any demands for IRFBE20L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE20L Mga katangian ng produkto
Bilang ng Bahagi :
IRFBE20L
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 800V 1.8A TO-262
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.8A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.5 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
530pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAK
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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