Micron Technology Inc. - MT29F2G08ABAEAH4-AATX:E TR

KEY Part #: K937826

MT29F2G08ABAEAH4-AATX:E TR Pagpepresyo (USD) [18200pcs Stock]

  • 1 pcs$2.75043
  • 1,000 pcs$2.73675

Bilang ng Bahagi:
MT29F2G08ABAEAH4-AATX:E TR
Tagagawa:
Micron Technology Inc.
Detalyadong Paglalarawan:
IC FLASH 2G PARALLEL 63VFBGA. NAND Flash SLC 2G 256MX8 FBGA
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Lohika - Mga Gate at Inverters, Lohika - Multivibrator, Naka-embed - System On Chip (SoC), Naka-embed - Microcontroller, PMIC - Mga Regulator ng Boltahe - Linya, PMIC - Mga superbisor, PMIC - PFC (Pagwawasto ng Power Factor) and Interface - Mga Serializer, Deserializer ...
Kumpetensyang Pakinabang:
We specialize in Micron Technology Inc. MT29F2G08ABAEAH4-AATX:E TR electronic components. MT29F2G08ABAEAH4-AATX:E TR can be shipped within 24 hours after order. If you have any demands for MT29F2G08ABAEAH4-AATX:E TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT29F2G08ABAEAH4-AATX:E TR Mga katangian ng produkto

Bilang ng Bahagi : MT29F2G08ABAEAH4-AATX:E TR
Tagagawa : Micron Technology Inc.
Paglalarawan : IC FLASH 2G PARALLEL 63VFBGA
Serye : -
Katayuan ng Bahagi : Active
Uri ng memorya : Non-Volatile
Format ng memorya : FLASH
Teknolohiya : FLASH - NAND
Laki ng memorya : 2Gb (256M x 8)
Dalas ng Orasan : -
Sumulat ng Oras ng Ikot - Salita, Pahina : -
Oras ng pagtanggap : -
Memory Interface : Parallel
Boltahe - Supply : 2.7V ~ 3.6V
Temperatura ng pagpapatakbo : -40°C ~ 105°C (TA)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 63-VFBGA
Package ng Tagabigay ng Device : 63-VFBGA (9x11)

Maaari ka ring Makisalamuha sa
  • 71V25761S166PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

  • W9825G2JB-75

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 133MHz,

  • W9825G2JB-6

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 166MHz,

  • IS66WVC4M16EALL-7010BLI

    ISSI, Integrated Silicon Solution Inc

    IC PSRAM 64M PARALLEL 54VFBGA.

  • W97AH2KBVX2I

    Winbond Electronics

    IC DRAM 1G PARALLEL 134VFBGA. DRAM 1Gb LPDDR2, x32, 400MHz, -40 85C

  • W97AH6KBVX2I

    Winbond Electronics

    IC DRAM 1G PARALLEL 134VFBGA. DRAM 1Gb LPDDR2, x16, 400MHz, -40 85C